Study of the Conduction Properties of the n GaN Cap Layer in GaN/InAlN/GaN E-HEMTs
نویسندگان
چکیده
Carrier transport in normally-off n GaN/InAlN/AlN/GaN high electron mobility transistors is studied using two-dimensional numerical device simulation. We focus on the n GaN cap layer, which is removed under the gate, and its contribution to drain current. Our simulation results show that despite the high doping density and relatively high carrier concentration in this layer, no significant transport takes place during the on-state. Similarly, under the off-state bias condition, even though an increase in the electric field in the cap layer is observed, the leakage current is provided mostly by the buffer layer.
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